long channel MOSFET
长沟道晶体管
Gate Charge Analysis and Structure Improvement of Power MOSFET
栅电荷分析及结构改进
SiC compensated by lower MOSFET losses due to the GaAs lower junction capacitance.
和碳化硅技术相比, 砷化镓有成本和可靠性优势。
PWM microelectronic c ontrol technique and AC DC AC DC invert technique with MOSFET half bri.
具有短接限流，限时衰减和恒流，恒压相结合的特点。
The source of differential mode interferences is the current switched by a MOSFET or a diode.
差模干扰来源于场效应晶体管或二极管对电流的开关。
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